Published July 15, 2013 | Version v1
Journal article

Conductive tracks of 30-MeV C60 clusters in doped and undoped tetrahedral amorphous carbon

  • 1. Harz University of Applied Sciences, 38855 Wernigerode (Germany)
  • 2. II. Institute of Physics, University of Göttingen, 37077 Göttingen (Germany)
  • 3. Technische Universität Darmstadt, 64287 Darmstadt (Germany)
  • 4. Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany)
  • 5. Helmholtz-Zentrum Berlin GmbH, 14109 Berlin (Germany)

Description

In insulating tetrahedral amorphous carbon (ta-C), the irradiation with 30-MeV C60 cluster ions leads to the formation of well conducting tracks. While electrical currents through individual tracks produced with monoatomic projectiles (e.g. Au or U) often exhibit rather large track to track fluctuations, C60 clusters are shown to generate highly conducting tracks with very narrow current distributions. Additionally, all recorded current–voltage curves show linear characteristics. These findings are attributed to the large specific energy loss dE/dx of the 30-MeV C60 clusters. We also investigated C60 tracks in ta-C films which were slightly doped with B, N or Fe during film growth. Doping apparently increases the ion track conductivity. However, at the same time the insulating characteristics of the pristine ta-C film can be reduced. The present C60 results are compared with data from earlier experiments with monoatomic heavy ion beams. The investigations were performed by means of atomic force microscopy including temperature dependent conductivity measurements of single ion tracks

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2012.12.081

Additional details

Identifiers

DOI
10.1016/j.nimb.2012.12.081;
PII
S0168-583X(13)00100-6;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
307
Journal Page Range
p. 265-268
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
18. international conference on ion beam modifications of materials
Acronym
IBMM2012
Dates
2-7 Sep 2012
Place
Qingdao (China)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45065274
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMIC FORCE MICROSCOPY; DIAGRAMS; DOPED MATERIALS; ELECTRIC CURRENTS; ENERGY LOSSES; FILMS; FLUCTUATIONS; FULLERENES; HEAVY IONS; ION BEAMS; MEV RANGE 10-100
Descriptors DEC
BEAMS; CARBON; CHARGED PARTICLES; CURRENTS; ELEMENTS; ENERGY RANGE; INFORMATION; IONS; LOSSES; MATERIALS; MEV RANGE; MICROSCOPY; NONMETALS; VARIATIONS

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.