Conductive tracks of 30-MeV C60 clusters in doped and undoped tetrahedral amorphous carbon
- 1. Harz University of Applied Sciences, 38855 Wernigerode (Germany)
- 2. II. Institute of Physics, University of Göttingen, 37077 Göttingen (Germany)
- 3. Technische Universität Darmstadt, 64287 Darmstadt (Germany)
- 4. Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany)
- 5. Helmholtz-Zentrum Berlin GmbH, 14109 Berlin (Germany)
Description
In insulating tetrahedral amorphous carbon (ta-C), the irradiation with 30-MeV C60 cluster ions leads to the formation of well conducting tracks. While electrical currents through individual tracks produced with monoatomic projectiles (e.g. Au or U) often exhibit rather large track to track fluctuations, C60 clusters are shown to generate highly conducting tracks with very narrow current distributions. Additionally, all recorded current–voltage curves show linear characteristics. These findings are attributed to the large specific energy loss dE/dx of the 30-MeV C60 clusters. We also investigated C60 tracks in ta-C films which were slightly doped with B, N or Fe during film growth. Doping apparently increases the ion track conductivity. However, at the same time the insulating characteristics of the pristine ta-C film can be reduced. The present C60 results are compared with data from earlier experiments with monoatomic heavy ion beams. The investigations were performed by means of atomic force microscopy including temperature dependent conductivity measurements of single ion tracks
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2012.12.081Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2012.12.081;
- PII
- S0168-583X(13)00100-6;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 307
- Journal Page Range
- p. 265-268
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 18. international conference on ion beam modifications of materials
- Acronym
- IBMM2012
- Dates
- 2-7 Sep 2012
- Place
- Qingdao (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45065274
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; DIAGRAMS; DOPED MATERIALS; ELECTRIC CURRENTS; ENERGY LOSSES; FILMS; FLUCTUATIONS; FULLERENES; HEAVY IONS; ION BEAMS; MEV RANGE 10-100
- Descriptors DEC
- BEAMS; CARBON; CHARGED PARTICLES; CURRENTS; ELEMENTS; ENERGY RANGE; INFORMATION; IONS; LOSSES; MATERIALS; MEV RANGE; MICROSCOPY; NONMETALS; VARIATIONS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.