Published February 21, 2014 | Version v1
Journal article Metadata-only

Vacancy complexes in Sb-doped SnO2

Creators

  • 1. Department of Applied Physics, Aalto University, 00076 Aalto (Finland)
  • 2. Department of Materials, University of California, Santa Barbara, 93106 California (United States)
  • 3. Leibniz Institute for Crystal Growth, 12489 Berlin (Germany)

Description

MBE-grown Sb-doped epitaxial SnO2 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies

Additional details

Identifiers

DOI
10.1063/1.4865672;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1583
Journal Issue
1
Journal Page Range
p. 368-371
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
27. international conference on defects in semiconductors
Acronym
ICDS-2013
Dates
21-26 Jul 2013
Place
Bologna (Italy)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45084946
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COMPLEXES; DOPED MATERIALS; POSITRONS; SPECTROSCOPY; THIN FILMS; TIN OXIDES; VACANCIES
Descriptors DEC
ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; FERMIONS; FILMS; LEPTONS; MATERIALS; MATTER; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; TIN COMPOUNDS

Optional Information

Notes
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