Published 1995
| Version v1
Miscellaneous
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Ion mass dependence of normalized regrowth rates in MeV ion beam induced epitaxial crystallization
- 1. Osaka National Research Institute, AIST, Ikeda, Osaka, (Japan)
Description
Short communication
Files
28080487.pdf
Files
(20.4 kB)
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Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 10035.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28080487
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHANNELING; EPITAXY; GERMANIUM IONS; HELIUM IONS; ION IMPLANTATION; MEV RANGE 01-10; RECRYSTALLIZATION; SILICON
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL GROWTH METHODS; ELEMENTS; ENERGY RANGE; IONS; MEV RANGE; SEMIMETALS