Radiation-induced conductivity in quartz crystals
Creators
- 1. Henry Krumb School of Mines, Columbia University, New York, New York 10027
Description
Following room-temperature irradiation of quartz crystals by x rays or γ rays, a transient enhancement of electrical conductivity is observed which decays over a period of several hours. This enhanced conductivity is produced by alkali ions (M+) which are liberated during the irradiation. By freezing in this transient conductivity of synthetic crystals to temperatures below 270 K, the activation energy E/sub m/ for migration of free alkali ions along c-axis channels of the crystal is shown to be 0.14 +- 0.01 eV. The activation energy for the annealing process is approx.0.5 eV, showing that annealing is not controlled by E/sub m/. Results on natural crystals following irradiation are quite different from those of the synthetics; the differences are explained in terms of the presence of shallow traps for free M+ ions in natural crystals. Finally, the transient conductivity is compared with other transient phenomena following irradiation, viz., the frequency change and internal friction of quartz-controlled oscillators
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 53
- Journal Issue
- 1
- Series
- J. Appl. Phys.
- Journal Page Range
- 485-489
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 13668295
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ALKALI METALS; ANNEALING; COMPARATIVE EVALUATIONS; CRYSTALS; DECAY; ELECTRIC CONDUCTIVITY; ELECTROPHORESIS; INTERNAL FRICTION; IONS; MATHEMATICAL MODELS; MEDIUM TEMPERATURE; PHYSICAL RADIATION EFFECTS; QUARTZ; TRANSIENTS; X RADIATION
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY; FRICTION; HEAT TREATMENTS; IONIZING RADIATIONS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SILICON COMPOUNDS; SILICON OXIDES