The deepness enhancing of an AFM-tip induced surface nanomodification

The novel method of the semiconductor nanostructuring (TINE and MEMO) has been developed on the base of the simultaneous AFM-tip induced local anodic oxidation and mechanical modification of the surface under the applying of advanced electric potentials. The TINE and MEMO-based technology allows obtaining the principle new scale of the depth up to 100 nm for the nanostructure fabrication with a low aspect relation between the width and deepness. The developed nanoscale AFM-lithography has been clearly demonstrated on titanium, gallium arsenide and silicon substrates for creation of electronic nanodevices