A high-resolution angle-resolved photoemission spectrometer combined with laser molecular-beam epitaxy at SPring-8 BL17SU

We have constructed a high-resolution synchrotron-radiation photoemission spectrometer combined with a laser molecular-beam epitaxy (laser MBE) thin film growth system in order to investigate the electronic structure of oxide and nitride thin films. The system was installed at the newly built soft X-ray undulator beamline BL17SU of SPring-8. Total energy resolution of 102 meV was achieved at photon energy of 870 eV. The photoemission apparatus is connected to a laser MBE chamber through a preparation chamber. Single crystal thin-film samples fabricated by laser MBE can be transferred quickly into the photoemission chamber without breaking ultrahigh vacuum. Various new studies are possible using this system and third-generation soft X-ray synchrotron light source, such as direct observation of the bulk electronic band structure of single-crystal films with no cleavable plane, the interface electronic structure of oxide or nitride heterostructures, etc