Published May 1984
| Version v1
Journal article
Magnetoresistance measurements of V3Si evidence for precursor effects of the Martensitic transformation
Creators
- 1. Centre National de la Recherche Scientifique, 38 - Grenoble (France). Centre de Recherches sur les Tres Basses Temperatures
- 2. Centre National de la Recherche Scientifique, 38 - Saint-Martin-d'Heres (France). Lab. de Genie Physique
Description
Magnetoresistivity measurements on transforming and non-transforming V3Si are reported. The martensitic structural transformation (Tsub(m) approx.= 21 K) is induced by annealing. The transforming sample shows large deviations from the Koehler's rule [Δrho/rho = f(H/rho)], at temperatures much higher than Tsub(m). They are attributed to precursor effects of the transition, previously observed by other techniques, and are interpreted in terms of the development of different relaxation times for scattering of the electrons. (author)
Additional details
Publishing Information
- Journal Title
- Solid State Commun.
- Journal Volume
- 50
- Journal Issue
- 5
- Series
- Solid State Commun.
- Journal Page Range
- 453-457
- ISSN
- 0038-1098
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 15048803
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CRYSTAL STRUCTURE; CRYSTAL-PHASE TRANSFORMATIONS; ELECTRONS; INTERMETALLIC COMPOUNDS; MAGNETORESISTANCE; RELAXATION TIME; SCATTERING; SILICON ALLOYS; TEMPERATURE DEPENDENCE; VANADIUM ALLOYS
- Descriptors DEC
- ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; HEAT TREATMENTS; LEPTONS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES