Published July 1, 2013
| Version v1
Journal article
Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices
- 1. Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, 28040 Madrid (Spain)
- 2. Centro de Física Nuclear, Universidade de Lisboa, 1649-003 Lisboa (Portugal)
- 3. Instituto Tecnológico e Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, 2686-953 Sacavém (Portugal)
- 4. Departamento de Física Aplicada, Universidad Autónoma de Madrid (Spain)
- 5. Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid (Spain)
Description
The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30 nm < d < 90 nm). After rapid thermal annealing, the Al out-diffusion is induced even for the thickest Ti barrier, accompanied by Au in-diffusion and the oxidation of the surface. Uniform contacts were found only for d > 50 nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2012.12.030Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2012.12.030;
- PII
- S0168-583X(12)00791-4;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 306
- Journal Page Range
- p. 212-217
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 13. international conference on microprobe technology and applications; 6. workshop on proton beam writing
- Acronym
- ICNMATA2012
- Dates
- 22-27 Jul 2012
- Place
- Lisbon (Portugal)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45065192
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRATERS; DIFFUSION BARRIERS; DISTRIBUTION; EQUIPMENT; GALLIUM NITRIDES; OXIDATION; PIXE ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACES; THICKNESS; TRANSISTORS
- Descriptors DEC
- CAVITIES; CHEMICAL ANALYSIS; CHEMICAL REACTIONS; DIMENSIONS; GALLIUM COMPOUNDS; HEAT TREATMENTS; NITRIDES; NITROGEN COMPOUNDS; NONDESTRUCTIVE ANALYSIS; PNICTIDES; SEMICONDUCTOR DEVICES; SPECTROSCOPY; X-RAY EMISSION ANALYSIS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.