Chemical vapor deposition of atomically-thin layered and wired transition metal chalcogenides

Recently, atomically-thin layered and wired transition metal chalcogenides (TMCs) have attracted much attention because of their unique physical properties and potential applications. To understand and use these materials, it is still essential to develop large-scale growth processes of such TMC nanostructures with various geometries. In this article, the author introduces the recent progress of the chemical vapor deposition (CVD) growth of layered and wired TMCs. For 2D layered TMCs, metal-organic CVD and direct growth at metal/oxide interface are presented. CVD also provides a powerful way for wafer-scale growth of 1D TMC atomic wires with either aligned, atomically thin 2D sheets or random networks of 3D bundles, both composed of individual wires. (author)