Plasmon resonance enhanced WS2 photodetector with ultra-high sensitivity and stability
- 1. Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084 (China)
- 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)
Description
Tungsten disulfide (WS2) has been demonstrated for optoelectronic devices due to its favorable semiconducting band gaps, high stability and higher carrier mobility than other transition metal dichalcogenides (TMDs). However, the photoresponsivity of WS2-based photodetector is low due to the poor optical absorbance, which limits its application in high-performance photodetection. Here, we show an easy realized method to improve the responsivity of WS2 detectors by Au nanospheres (NPs). The Au NPs concentrate free space electromagnetic wave efficiently by localized surface plasmon resonances (LSPR), strongly enhance the electric field on WS2 films. As a result, more carriers are excited with the assistant of LSPR. With optimized design, the detector exhibited several times to ten folds enhancement from near infrared to visible spectrum region, and reach an excellent high responsivity of 1050 A/W at the wavelength of 590 nm. Furthermore, the photodetector showed an excellent temperature stability after annealing at 300 °C on air environment. The work provides a new way for high-performance and stable photodetector for extreme and harsh environment.
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2019.03.179;
- PII
- S0169433219308013;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 481
- Journal Page Range
- p. 1127-1132
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55055407
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARRIER MOBILITY; DESIGN; ELECTRIC FIELDS; ELECTROMAGNETIC RADIATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PLASMONS; SURFACES; THIN FILMS; TRANSITION ELEMENTS; TUNGSTEN SULFIDES; WAVELENGTHS
- Descriptors DEC
- CHALCOGENIDES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; METALS; MOBILITY; OPTICAL EQUIPMENT; QUASI PARTICLES; RADIATIONS; REFRACTORY METAL COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSDUCERS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.