Published December 7, 2015
| Version v1
Journal article
Suppression of low-frequency charge noise in gates-defined GaAs quantum dots
Creators
- 1. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)
- 2. Key Laboratory of Quantum Information, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026 (China)
Description
To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction
Additional details
Identifiers
- DOI
- 10.1063/1.4937271;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 107
- Journal Issue
- 23
- Journal Page Range
- p. 233104-233104.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47056187
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM ARSENIDES; DOPED MATERIALS; GALLIUM ARSENIDES; MODULATION; NOISE; QUANTUM DOTS; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC