Published December 3, 2007
| Version v1
Journal article
Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping
Creators
- 1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Description
We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides
Additional details
Identifiers
- DOI
- 10.1063/1.2822440;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 91
- Journal Issue
- 23
- Journal Page Range
- p. 231909-231909.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39038412
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AIR; ANNEALING; CRYSTAL GROWTH; DEPOSITION; DOPED MATERIALS; GALLIUM; NITROGEN; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; FILMS; FLUIDS; GASES; HEAT TREATMENTS; MATERIALS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2007 American Institute of Physics