Published July 1974
| Version v1
Journal article
Electrical properties of CdSb doped with the 4 group elements
- 1. Chernovitskij Gosudarstvennyj Univ. (Ukrainian SSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Электрические свойства CdSb, легированного элементами 4 группы
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 8
- Journal Issue
- 7
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1395-1397
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 6163745
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANTIMONY COMPOUNDS; CADMIUM COMPOUNDS; CRYSTAL DOPING; DISLOCATIONS; ELECTRIC CONDUCTIVITY; GERMANIUM; HALL EFFECT; HOLE MOBILITY; LEAD; LOW TEMPERATURE; MEDIUM TEMPERATURE; MONOCRYSTALS; P-TYPE CONDUCTORS; QUANTITY RATIO; TEMPERATURE DEPENDENCE; TIN
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; LINE DEFECTS; METALS; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Published in summary form only. For English translation see the journal Sov. Phys.-Semicond.