Strong piezoelectricity and improved rectifier properties in mono- and multilayered CuInPS
Creators
- 1. School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081 (China)
- 2. State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐Optoelectronics, School of Physics, Peking University, Beijing, 100871 (China)
- 3. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China)
- 4. School of Aerospace Engineering, Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081 (China)
- 5. College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing, 100124 (China)
Description
Most atomically thin piezoelectrics suffer from weak piezoelectric response or current rectification along the thickness direction, which largely hinders their applications in a vertical crossbar architecture. Therefore, exploring new types of ultrathin materials with strong longitudinal piezoelectric coefficient and rectification is highly desired. In this study, the monolayer of van der Waals CuInP2S6 (CIPS) is successfully exfoliated and its strong piezoelectricity in the out-of-plane direction with an effective coefficient d33eff of ≈5.12 pm V, which is one or two orders of magnitude higher than that of most existing monolayer materials with intrinsic d33, is confirmed. A prototype vertical device is further constructed and the current rectification is achieved through the flexoelectricity induced by the scanning tip force. The switching between low and high rectification states can be readily controlled by tuning the mechanical loads. These findings manifest that CIPS possesses promising application in vertical nanoscale piezoelectric devices and provides a novel strategy for achieving a good current rectification in ultrathin piezoelectrics. (© 2023 Wiley‐VCH GmbH)
Availability note (English)
Available from: http://dx.doi.org/10.1002/adfm.202213561Additional details
Identifiers
Publishing Information
- Journal Title
- Advanced Functional Materials (Internet)
- Journal Volume
- 33
- Journal Issue
- 40
- Journal Page Range
- p. 1-8
- ISSN
- 1616-3028
- CODEN
- AFMDC6
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 54120248
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COPPER PHOSPHIDES; COPPER SULFIDES; INDIUM PHOSPHIDES; LAYERS; NANOSTRUCTURES; PIEZOELECTRICITY; RECTIFIERS; VAN DER WAALS FORCES
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; ELECTRICAL EQUIPMENT; ELECTRICITY; EQUIPMENT; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- AID: 2213561