Published November 1, 2010 | Version v1
Journal article

Residual stress characterization of Al/SiC nanoscale multilayers using X-ray synchrotron radiation

  • 1. Materials Science and Engineering, Arizona State University, Tempe, AZ 85287-6106 (United States)
  • 2. High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN (United States)
  • 3. Department of Mechanical Engineering, University of New Mexico, Albuquerque, NM 87131 (United States)

Description

Nanolayered composites are used in a variety of applications such as wear resistant coatings, thermal barrier coatings, optical and magnetic thin films, and biological coatings. Residual stresses produced in these materials during processing play an important role in controlling their microstructure and properties. In this paper, we have studied the residual stresses in model metal-ceramic Al/SiC nanoscale multilayers produced by physical vapor deposition (magnetron sputtering). X-ray synchrotron radiation was used to measure stresses in the multilayers using the sin2Ψ technique. The stresses were evaluated as a function of layer thicknesses of Al and SiC and also as a function of the number of layers. The stress state of Al in the multilayer was largely compressive, compared to single layer Al stresses. This is attributed to a peening mechanism due to bombardment of the Al layers by SiC and Ar neutrals during deposition. The stress evolution was numerically modeled by a simplified peening process to qualitatively explain the Al thickness-dependent residual stresses.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.08.148

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.08.148;
PII
S0040-6090(10)01278-2;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
519
Journal Issue
2
Journal Page Range
p. 759-765
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Romanian conference on advanced materials 2009
Acronym
ROCAM 2009
Dates
25-28 Aug 2009
Place
Brashov (Romania)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.