Published March 1989
| Version v1
Journal article
Noise model for the superconducting-base semiconductor-isolated transistor
Creators
- 1. IBM Research Div., T.J. Watson Research Center, Yorktown Heights, NY (USA)
Description
A simple noise model for bipolar transistors is adapted to the Superconducting-Base Semiconductor-Isolated Transistor (SUBSIT). This model includes two statistically independent shot noise current sources in a lumped element model. For the case where the emitter of the SUBSIT is a normal metal, it is shown that the bipolar model carries over intact. For a SUBSIT with a superconducting emitter as well as base, the noise performance improved tremendously, due to the sharper turn-on characteristic. Noise temperatures in the milliKelvin regime are possible, and the energy resolution is likely to be quantum limited
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Magnetics
- Journal Volume
- 25
- Journal Issue
- 2
- Series
- IEEE Trans. Magn.
- Journal Page Range
- 1278-1281
- ISSN
- 0018-9464
- CODEN
- IEMGA
Conference
- Title
- Applied superconductivity conference.
- Dates
- 21-25 Aug 1988.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20070772
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ENERGY RESOLUTION; FIELD EFFECT TRANSISTORS; NOISE; PERFORMANCE; QUANTUM EFFICIENCY; SUPERCONDUCTING JUNCTIONS
- Descriptors DEC
- EFFICIENCY; RESOLUTION; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-880812--.