Published October 1993 | Version v1
Journal article Metadata-only

Electron beam irradiation technology for decreasing the [enlargement factor] hFE value of transistor

Creators

  • 1. Inst. of Applied Technical Physics of Zhejiang Province, Hangzhou, ZJ (China)

Description

The relationship between the enlargement factor (hFE) value of a transistor and the electron flux, beam current, annealing temperature and annealing time etc. are studied in this paper. The study shows the hFE value of transistor can be decreased efficiently by electron beam irradiation and can be stabilized by annealing. (author)

Additional details

Publishing Information

Journal Title
Radiation Physics and Chemistry
Journal Volume
42
Journal Issue
4-6
Journal Page Range
p. 1035-1038.
ISSN
0146-5724
CODEN
RPCHDM

Conference

Title
8. international meeting on radiation processing.
Dates
13-18 Sep 1992.
Place
Beijing (China).

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
25029121
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; BEAM CURRENTS; ELECTRON BEAMS; IRRADIATION; PHYSICAL RADIATION EFFECTS; TRANSISTORS
Descriptors DEC
BEAMS; CURRENTS; HEAT TREATMENTS; LEPTON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES