Published May 1989 | Version v1
Journal article Metadata-only

Surface properties of gallium arsenides after low-energy ion bombardment

Creators

  • 1. Moskovskij Inst. Ehlektronnoj Tekhniki, Moscow (USSR)

Description

Complex investigation of changes in GaAs surface layer composition, structure and electrical properties under the effect of argon low energy (50-150 eV) ion beams and chemically active gases is conducted

Additional details

Additional titles

Original title (Russian)
Свойства поверхности арсенида галлия, облученной низкоэнергетичными ионами

Publishing Information

Journal Title
Mikroehlektronika
Journal Volume
18
Journal Issue
3
Series
Mikroehlektronika.
Journal Page Range
236-240
ISSN
0544-1269
CODEN
MKETA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
22011562
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ARGON IONS; CHEMICAL COMPOSITION; EV RANGE 10-100; EV RANGE 100-1000; GALLIUM ARSENIDES; ION IMPLANTATION; MICROSTRUCTURE; PHYSICAL RADIATION EFFECTS; SPATIAL DISTRIBUTION; SURFACES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ENERGY RANGE; EV RANGE; GALLIUM COMPOUNDS; IONS; PNICTIDES; RADIATION EFFECTS