Total dose radiation effects for implanted buried oxides

The oxygen implantation process is now the most accepted means of forming an SOI substrate. The authors previously developed a technique based on high frequency C - V measurements, for extracting the fixed charge, interface state, and doping densities at both of the interfaces associated with this buried oxide. Using this technique they show the evolution of these charge densities with irradiation at both oxide interfaces. The densities of trapped holes (Qot) and generated interface states were found to be low. The effect of a substrate bias on the radiation response was characterized, showing that a bias exists that minimizes hole trapping, and that the substrate bias eliminates the differences due to the SIMOX process variations