Impact of electron irradiation on N- and O-enriched FZ silicon p-in-n pad radiation detectors
Creators
- 1. CiS Forschungsinstitut fuer Mikrosensorik GmbH, Erfurt (Germany)
- 2. Leibniz-Institut fuer Polymerforschung Dresden e.V., Dresden (Germany)
- 3. Topsil Semiconductors sp. z o. o., Warszawa (Poland)
- 4. Institute of Electronic Materials Technology, Warszawa (Poland)
Description
Nitrogen and oxygen enriched FZ silicon p-in-n pad radiation detectors are investigated with respect to the radiation hardness. The leakage current and the charge carrier lifetime are measured before and after 1 MeV electron irradiation. Before irradiation the leakage current was found to increase due to enrichment by nitrogen and oxygen. After the irradiation the leakage current as well as the radiation induced defect density are found to be reduced in the nitrogen and oxygen enriched samples. Hence, increased radiation hardness for the enriched FZ silicon is observed. The defect reduction efficiency of nitrogen was found to be about two orders of magnitude higher than that of oxygen. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.201700019Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
- Journal Volume
- 14
- Journal Issue
- 11
- Journal Page Range
- p. 1-6
- ISSN
- 1610-1642
- CODEN
- PSSCGL
Conference
- Title
- 12. International conference on nitride semiconductors
- Acronym
- ICNS 12
- Dates
- 24-28 Jul 2017
- Place
- Strasbourg (France)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 49021047
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTRA; CARRIER LIFETIME; CRYSTAL DEFECTS; CRYSTAL GROWTH; DIFFUSION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FABRICATION; INFRARED SPECTRA; LEAKAGE CURRENT; MEV RANGE 01-10; NITROGEN ADDITIONS; OXYGEN ADDITIONS; PHOSPHORUS ADDITIONS; RADIATION EFFECTS; RADIOSENSITIVITY; SI SEMICONDUCTOR DETECTORS; SILICON; ZONE MELTING
- Descriptors DEC
- ALLOYS; BEAMS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; LIFETIME; MATERIALS; MEASURING INSTRUMENTS; MELTING; MEV RANGE; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS; SENSITIVITY; SPECTRA
Optional Information
- Notes
- With 9 figs., 2 tabs.