Published March 21, 2018
| Version v1
Journal article
Enhanced magnetoelectric response in 2-2 bilayer 0.50Pb(Ni1/3Nb2/3)O3–0.35PbTiO3–0.15PbZrO3/NiFe2O4 thin films
- 1. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400 076, Maharashtra (India)
Description
In this work, room temperature magnetoelectric (ME) properties of 0.50Pb(Ni1/3Nb2/3)O3–0.35PbTiO3–0.15PbZrO3 (PNNZT)/NiFe2O4 (NFO) 2-2 bilayer thin films grown on Pt/Ti/SiO2/Si substrate, using pulsed laser deposition technique, are reported. Structural studies confirm single phase PNNZT/NFO 2-2 bilayer structure formation. PNNZT/NFO 2-2 bilayer thin film shows a maximum ME voltage coefficient (α E) of ∼0.70 V cm−1. Oe–1 at a frequency of 1 kHz. The present study reveals that PNNZT/NFO bilayer thin film can be a potential candidate for technological applications. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/aaa98fAdditional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 51
- Journal Issue
- 11
- Journal Page Range
- [6 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53007879
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; ENERGY BEAM DEPOSITION; KHZ RANGE; LASER RADIATION; LAYERS; MAGNETIC PROPERTIES; OZONE; PULSED IRRADIATION; SILICA; SILICON OXIDES; SUBSTRATES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; DEPOSITION; ELECTROMAGNETIC RADIATION; FILMS; FREQUENCY RANGE; IRRADIATION; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SILICON COMPOUNDS; SURFACE COATING