Published March 21, 2018 | Version v1
Journal article

Enhanced magnetoelectric response in 2-2 bilayer 0.50Pb(Ni1/3Nb2/3)O3–0.35PbTiO3–0.15PbZrO3/NiFe2O4 thin films

  • 1. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400 076, Maharashtra (India)

Description

In this work, room temperature magnetoelectric (ME) properties of 0.50Pb(Ni1/3Nb2/3)O3–0.35PbTiO3–0.15PbZrO3 (PNNZT)/NiFe2O4 (NFO) 2-2 bilayer thin films grown on Pt/Ti/SiO2/Si substrate, using pulsed laser deposition technique, are reported. Structural studies confirm single phase PNNZT/NFO 2-2 bilayer structure formation. PNNZT/NFO 2-2 bilayer thin film shows a maximum ME voltage coefficient (α E) of ∼0.70 V cm−1. Oe–1 at a frequency of 1 kHz. The present study reveals that PNNZT/NFO bilayer thin film can be a potential candidate for technological applications. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/aaa98f

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
51
Journal Issue
11
Journal Page Range
[6 p.]
ISSN
0022-3727
CODEN
JPAPBE