Published 2000 | Version v1
Miscellaneous Metadata-only

Avalanche breakdown in electron irradiated silicon p-n-junctions at low temperatures

Creators

  • 1. Institute of Solid State and Semiconductor Physics, Minsk (Belarus)

Description

no abstract available

Part of:
Abstracts of 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000

Additional details

Publishing Information

Imprint Title
Abstracts of 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
Imprint Pagination
120 p.
Journal Page Range
p. 52

Conference

Title
3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
Dates
12-15 Jun 2000
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
32030014
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ELECTRICAL PROPERTIES; ELECTRON BEAMS; IRRADIATION; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TOWNSEND DISCHARGE
Descriptors DEC
BEAMS; ELECTRIC DISCHARGES; ELEMENTS; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TEMPERATURE RANGE

Optional Information