Published November 1982
| Version v1
Journal article
Some features of interatomic binding in semiconductors
- 1. Moskovskij Inst. Ehlektronnoj Tekhniki (USSR)
- 2. Moskovskij Khimiko-Tekhnologicheskij Inst. (USSR)
Description
Calculations of the Debye temperatures, anti mTHETA2 values and root-mean-square dynamic atomic displacements from the equilibrium position are performed for CdTe, CdSe, #betta#-In2Se3 semiconductors on the base of data on isobaric heat capacity measurements. Correlations between bond strength characteristics in semiconductors are found out. The effect of ionic and metallic bond components on the mentioned characteristics is revealed
Additional details
Additional titles
- Original title (Russian)
- Некоторые характеристики прочности межатомной связи в полупроводниках
Publishing Information
- Journal Title
- Zh. Fiz. Khim.
- Journal Volume
- 56
- Journal Issue
- 11
- Series
- Zh. Fiz. Khim.
- Journal Page Range
- 2803-2806
- ISSN
- 0044-4537
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14798731
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BINDING ENERGY; CADMIUM SELENIDES; CADMIUM TELLURIDES; DEBYE TEMPERATURE; INDIUM SELENIDES; SEMICONDUCTOR MATERIALS; SPECIFIC HEAT; THERMAL EXPANSION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ENERGY; EXPANSION; INDIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- For English translation see the journal Russian Journal of Physical Chemistry (UK).