Published March 15, 1987
| Version v1
Journal article
Observation of bulk tantalum oxide formation below 35 K
- 1. Department of Physics, Brookhaven National Laboratory, Upton, New York 11973
Description
This paper describes the observation of bulk oxide formation near 35 K in a region where thermal diffusion cannot account for the oxide formation of bulk oxide. The data are discussed in terms of the Mott tunneling theory of oxidation, which is one of the explanations of low-temperature oxidation which emphasizes an electric-field-assisted diffusion mechanism
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 35
- Journal Issue
- 8
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 3740-3744
- ISSN
- 0163-1829
- CODEN
- PRBMD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18055676
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC FIELDS; ENERGY LEVELS; F STATES; SYNTHESIS; TANTALUM OXIDES; THERMAL DIFFUSION; TUNNEL EFFECT; VERY LOW TEMPERATURE
- Descriptors DEC
- CHALCOGENIDES; DIFFUSION; OXIDES; OXYGEN COMPOUNDS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS