Structural and magnetic properties of Ge1-xMnx thin films grown on Ge (001) substrates
- 1. Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
- 2. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-14 Nagatsuta, Yokohama, Kanagawa 226-8502 (Japan)
Description
We investigate the structural and magneto-optical properties of Mn-doped Ge (Ge1-xMnx) films with self-organized nanocolumns, grown on Ge (001) substrates by molecular beam epitaxy (MBE), in which the substrate temperature (TS) and growth rate (RG) are varied. Transmission electron microscopy (TEM) observations and magnetic circular dichroism (MCD) measurements reveal that Mn-rich nanocolumnar precipitation is formed in the Ge1-xMnx films grown at TS ≤ 100 deg. C, with keeping the size and spacing. At higher TS (≥150 deg. C), ferromagnetic Mn5Ge3 clusters are formed. It is also found that the Mn distribution in the Ge1-xMnx films can be controlled: By lowering TS or increasing RG, the Mn content xnc in the nanocolumns decreases and Mn atoms are more distributed into the Ge matrix, and eventually the magnetic properties are changed. The formation of the nanocolumns is explained by the spinodal decomposition in the layer-by-layer growth mode. We analyzed the periodicity and Mn content xnc of nanocolumns by using the Cahn-Hilliard equation.
Additional details
Identifiers
- DOI
- 10.1063/1.3638701;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 110
- Journal Issue
- 7
- Journal Page Range
- p. 073903-073903.8
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43129114
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; DOPED MATERIALS; FERROMAGNETIC MATERIALS; GERMANIUM; GERMANIUM COMPOUNDS; LAYERS; MAGNETIC CIRCULAR DICHROISM; MAGNETIC PROPERTIES; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CRYSTAL GROWTH METHODS; DICHROISM; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; FILMS; MAGNETIC MATERIALS; MATERIALS; METALS; MICROSCOPY; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2011 American Institute of Physics