Published July 2005 | Version v1
Journal article

Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures

  • 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)

Description

Raman scattering spectroscopy is used to study the process of selective oxidation of Al0.97Ga0.03As layers. Stresses arising in GaAs/(AlGa)xOy layers as a result of selective oxidation under different conditions are determined. The effects of local heating of the samples with laser radiation during measurements of the Raman signals, photoresist hardening resulting from the oxidation, and overoxidation are analyzed. The instrumentation and method of selective oxidation are optimized; as a result, arrays of vertical-cavity surface-emitting lasers are fabricated. The active region of these lasers is based on two InGaAs quantum wells with top oxidized and bottom semiconductor distributed Bragg reflectors

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
39
Journal Issue
7
Journal Page Range
p. 748-753
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37031341
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Translation
Descriptors DEI
ALUMINIUM OXIDES; FABRICATION; GALLIUM ARSENIDES; GALLIUM OXIDES; HARDENING; HEATING; LASER RADIATION; LASERS; LAYERS; OXIDATION; QUANTUM WELLS; RAMAN EFFECT; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; STRESSES; SURFACES
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHEMICAL REACTIONS; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; RADIATIONS; SPECTRA

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 782-787 (No. 7, 2005); (c) 2005 Pleiades Publishing, Inc.