Coulomb coupling effects in the gigahertz complex admittance of a quantum R–L circuit
Creators
- 1. Laboratory of Mesoscopic and Low Dimensional Physics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)
Description
We report on the gigahertz admittance measurements of a quantum conductor, i.e. a quantum R–L circuit, to probe the intrinsic dynamic of the conductor. The magnetic field dependence of the admittance phase provides us with an effective way to study the role of Coulomb interaction between counterpropagating edge channels. In addition, there is a small jump in the admittance phase when the transmitted modes are changed. This is because the gate voltage leads to a static potential shift of the quantum channel, then a quantum capacitance related to the density of states of the edge channels are influenced. Our study has made new discoveries of the dynamic transport in a quantum conductor, finding evidence for the deviations from quantum chiral transport associated with Coulomb interactions. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/aac2acAdditional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 20
- Journal Issue
- 5
- Journal Page Range
- [9 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52034826
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CAPACITANCE; CHIRALITY; DENSITY OF STATES; ELECTRIC POTENTIAL; MAGNETIC FIELDS; QUANTUM SYSTEMS
- Descriptors DEC
- ELECTRICAL PROPERTIES; PARTICLE PROPERTIES; PHYSICAL PROPERTIES