Published September 1, 1981
| Version v1
Journal article
Hydrogen elimination during the glow-discharge deposition of a-Si:H alloys
Creators
- 1. Department of Energy and Environment, Brookhaven National Laboratory, Upton, New York 11973
Description
A model of the deposition of a-Si:H films by silane glow discharge is presented. Three steps are involved: SiH2 addition, H2 elimination, and cross linking. The model is based upon SiH2 gas-phase chemistry and explains the dependence of hydrogen content of a-Si:H upon substrate temperature
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 39
- Journal Issue
- 5
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 407-409
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12637783
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMISTRY; DEPOSITION; GASES; GLOW DISCHARGES; HYDROGEN; HYDROGEN ADDITIONS; SILANES; SILICON; STRUCTURAL MODELS; SUBSTRATES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ELECTRIC DISCHARGES; ELEMENTS; FLUIDS; HYDRIDES; HYDROGEN COMPOUNDS; NONMETALS; SEMIMETALS; SILICON COMPOUNDS