Published September 1, 1981 | Version v1
Journal article

Hydrogen elimination during the glow-discharge deposition of a-Si:H alloys

  • 1. Department of Energy and Environment, Brookhaven National Laboratory, Upton, New York 11973

Description

A model of the deposition of a-Si:H films by silane glow discharge is presented. Three steps are involved: SiH2 addition, H2 elimination, and cross linking. The model is based upon SiH2 gas-phase chemistry and explains the dependence of hydrogen content of a-Si:H upon substrate temperature

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
39
Journal Issue
5
Series
Appl. Phys. Lett.
Journal Page Range
407-409
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
12637783
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHEMISTRY; DEPOSITION; GASES; GLOW DISCHARGES; HYDROGEN; HYDROGEN ADDITIONS; SILANES; SILICON; STRUCTURAL MODELS; SUBSTRATES; TEMPERATURE DEPENDENCE
Descriptors DEC
ELECTRIC DISCHARGES; ELEMENTS; FLUIDS; HYDRIDES; HYDROGEN COMPOUNDS; NONMETALS; SEMIMETALS; SILICON COMPOUNDS