Published March 2006 | Version v1
Journal article Metadata-only

Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE

Creators

  • 1. Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

Description

Ga(In)AsSb covered InAs quantum dots (QDs) with emitting wavelength from 1.3 to 1.4 μm were investigated about optical properties. In order to understand the mechanism of the wavelength elongation by an Sb containing cover layer, the optical characterization was carried out by varying growth parameters using PL measurement at room temperature. It was found that a highly strained ultra-thin cover layer at a low growth rate is effective for high efficiency and long wavelength emission. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200564158

Additional details

Identifiers

DOI
10.1002/pssc.200564158;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
3
Journal Issue
3
Journal Page Range
p. 516-519
ISSN
1610-1634

Conference

Title
32. International symposium on compound semiconductors (ISCS-2005)
Dates
18-22 Sep 2005
Place
Rust (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
37032407
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANTIMONY; COATINGS; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THICKNESS; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIMENSIONS; ELEMENTS; EMISSION; EPITAXY; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; METALS; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE

Optional Information

Notes
With 4 figs., 11 refs.. SICI: 1610-1634(200603)3:3<516::AID-PSSC200564158>3.0.TX;2-A