High field magnetization of Sn1-xGdxTe

The magnetization of p-type Sn1-xGdxTe with x up to 0.045 and the hole concentration, p, varying from 2.7 to 8.3x1020 cm-3 has been measured in magnetic fields up to 27 T, at the temperatures 4.2 and 1.3 K. The data were fitted to a magnetization equation with single-ion and pair terms. From comparison of the exchange parameters determined from the high-field magnetization with those previously obtained from the high-temperature magnetic susceptibility it was found that in samples with p>5x1020 cm-3 the exchange was of short-range type, while in samples with a lower carrier concentration the long-range exchange mechanism was observed. (author)