Published September 22, 2008 | Version v1
Journal article

Role of fluorine in plasma nitridated ZrO2 thin films under irradiation

  • 1. Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
  • 2. Department of Physics, School of Science, Beihang University, Beijing 100083 (China)
  • 3. Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

Description

The role of fluorine in plasma-nitridated ZrO2 thin films under electron irradiation is investigated in situ by real-time high-resolution transmission electron microscopy. Fluorine and nitrogen codoping can suppress the microstructure evolution during electron beam bombardment and the corresponding origin is probed and verified. The results obtained by irradiation with an ultraviolet laser show that plasma fluorination can effectively remove the dissociative N or O particles in the ZrO2 thin films which can escape from the interstitial sites under electron irradiation. The mechanism of the irradiation stability of the F and N codoped ZrO2 thin film is also discussed

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
93
Journal Issue
12
Journal Page Range
p. 122907-122907.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2008 American Institute of Physics