Published March 15, 2008
| Version v1
Journal article
Low-frequency noise in GaN nanowire transistors
Creators
- 1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- 2. Ioffe Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)
- 3. Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
Description
Noise in nanostructures is one of the key problems impeding their applications in electronic devices. We show that the level of 1/f and recombination-generation noise in GaN nanowire field effect transistors can be suppressed by ultraviolet radiation by up to an order of magnitude. This strong suppression of the noise is explained by the illumination changing the occupancy of traps responsible for noise
Additional details
Identifiers
- DOI
- 10.1063/1.2895398;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 103
- Journal Issue
- 6
- Journal Page Range
- p. 064501-064501.4
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40015366
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRONIC EQUIPMENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; NOISE; QUANTUM WIRES; RECOMBINATION; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; EQUIPMENT; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- (c) 2008 American Institute of Physics