Published November 2019 | Version v1
Journal article

Rapid Epitaxial Growth of GdBa2Cu3O7-σ Films by Dilute Co Doping

  • 1. Southwest Jiaotong University, Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), School of Materials Science and Engineering (China)
  • 2. Southwest Jiaotong University, Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), School of Electrical Engineering (China)

Description

The effect of dilute Co doping on the epitaxial growth of GdBCO films was investigated by self-developed fluorine-free polymer-assisted metal-organic deposition (PA-MOD) method. Under the same sintering heat treatment, dilute Co doping dramatically improved the crystallinity, microstructure, and critical current density (Jc) of GdBCO films. High Jc of 4.0 MA/cm2 at 77 K and self-field was obtained in Co-doped film after only sintering for 30 min, which is eight times of the Jc for the undoped film. Also, Co-doped GdBCO film sintered for as short as 20 min still possesses a high Jc of 1.5 MA/cm2, whereas the Jc is 0 for the similarly sintered pure film. These results suggest that dilute Co doping facilitates the epitaxial growth of the high-performance GdBCO film.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Superconductivity and Novel Magnetism
Journal Volume
32
Journal Issue
11
Journal Page Range
p. 3449-3455
ISSN
1557-1939

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