Published May 2008
| Version v1
Journal article
The compare of total-dose irradiation effects between CMOS 4000 and 54HC devices
- 1. Chinese Academy of Sciences, Beijing (China). Graduate School
- 2. Xinjiang Technical Inst. of Physics and Chemistry, Urumqi (China)
- 3. School of Physics Science and Technology of Xinjiang Univ., Urumqi (China)
Description
By irradiating CMOS 4000 and 54HC series gate circuits under different biases, characteristics of total dose radiation responses of the devices were compared and mechanisms of the different radiation effects to the two kinds of circuits were investigated. The radiation tolerance testing methods and evaluating standards of the 54HC devices are discussed. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 31
- Journal Issue
- 5
- Journal Page Range
- p. 348-351
- ISSN
- 0253-3219
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 40060422
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COBALT 60; COMPARATIVE EVALUATIONS; CURIUM OXIDES; GAMMA RADIATION; GATING CIRCUITS; IRRADIATION; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; TESTING
- Descriptors DEC
- ACTINIDE COMPOUNDS; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHALCOGENIDES; COBALT ISOTOPES; CURIUM COMPOUNDS; DOSES; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; EVALUATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; TRANSISTORS; TRANSPLUTONIUM COMPOUNDS; TRANSURANIUM COMPOUNDS; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- 3 figs., 9 refs.