Published June 1, 2015 | Version v1
Journal article

Evaluation of the Ultrafast Thermal Manipulation of Magnetization Precession in Ferromagnetic Semiconductor (Ga,Mn)As

  • 1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

We present a quantitative evaluation study of the thermal effect responsible for laser-triggered collective magnetization dynamics in a ferromagnetic (Ga,Mn)As film without applying the external magnetic field by employing the pump-probe magneto-optical spectroscopy. Our observation shows that the effect of ultrafast laser heating on the manipulation of magnetization precession in a (Ga,Mn)As film is not exactly equivalent to that of the ambient temperature increase, and needs to be carefully analyzed by considering the temperature-dependent specific heat of (Ga,Mn)As. The transient modulation of magnetocrystalline anisotropy via ultrafast laser heating at low temperature exhibits a higher sensitivity than that at high temperature. The quantitative analysis of the laser-heating manipulated magnetization precession presented in this work is helpful for evaluating the laser-triggered ultrafast magnetization dynamics in (Ga,Mn)As films. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/32/6/067501

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
32
Journal Issue
6
Journal Page Range
[5 p.]
ISSN
0256-307X
CODEN
CPLEEU