Published February 8, 2016
| Version v1
Journal article
Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor
Creators
- 1. Department of Physics Education, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia)
- 2. Department Kimia, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia)
- 3. Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan)
- 4. Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung 40132 (Indonesia)
Description
In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic
Additional details
Identifiers
- DOI
- 10.1063/1.4941179;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1708
- Journal Issue
- 1
- Journal Page Range
- p. 070006-070006.4
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- International seminar on mathematics, science, and computer science education
- Acronym
- MSCEIS 2015
- Dates
- 17 Oct 2015
- Place
- Bandung (Indonesia)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47064779
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CURRENTS; HETEROJUNCTIONS; INTERFACES; ROUGHNESS; SUBSTRATES; SURFACES; TRANSISTORS; TUNNEL EFFECT
- Descriptors DEC
- SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SURFACE PROPERTIES
Optional Information
- Notes
- (c) 2016 AIP Publishing LLC