Published February 8, 2016 | Version v1
Journal article

Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

  • 1. Department of Physics Education, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia)
  • 2. Department Kimia, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia)
  • 3. Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan)
  • 4. Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung 40132 (Indonesia)

Description

In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1708
Journal Issue
1
Journal Page Range
p. 070006-070006.4
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
International seminar on mathematics, science, and computer science education
Acronym
MSCEIS 2015
Dates
17 Oct 2015
Place
Bandung (Indonesia)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47064779
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CURRENTS; HETEROJUNCTIONS; INTERFACES; ROUGHNESS; SUBSTRATES; SURFACES; TRANSISTORS; TUNNEL EFFECT
Descriptors DEC
SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SURFACE PROPERTIES

Optional Information

Notes
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