Published December 1, 2015 | Version v1
Journal article Metadata-only

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

Creators

  • 1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  • 2. School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710049 (China)
  • 3. Beijing Huajin Chuangwei Technology Co., Ltd., Beijing 100036 (China)
  • 4. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 (China)
  • 5. ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083 (China)

Description

Direct-current transfer characteristics of (InGaN)/AlGaN/AlN/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDS = 32.0 mA/mm) for VGS swept from +0.7 V to −0.6 V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AlGaN/AlN/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDS−VGS scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/32/12/127301

Additional details

Identifiers

DOI
10.1088/0256-307X/32/12/127301;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
32
Journal Issue
12
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48022503
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ALUMINIUM NITRIDES; DESIGN; DIRECT CURRENT; ELECTRON GAS; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HETEROJUNCTIONS; HOLES; TIME DEPENDENCE; TWO-DIMENSIONAL SYSTEMS
Descriptors DEC
ALUMINIUM COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS