Published 1983
| Version v1
Journal article
Dopant incorporation during solidification
- 1. Oak Ridge National Lab., TN
Description
Incorporation of Group III, IV, V dopants in silicon occurs as a result of solute trapping during laser annealing. Distribution coefficients and substitutional solubilities are far greater than equilibrium values, and can be functions of growth velocity and crystal orientation. Mechanisms limiting dopant incorporation at high concentrations are identified and discussed
Additional details
Publishing Information
- Journal Title
- Mater. Res. Soc. Symp. Proc.
- Journal Volume
- 13
- Series
- Mater. Res. Soc. Symp. Proc.
- Journal Page Range
- 287-296
- ISSN
- 0272-9172
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16020624
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; DOPED MATERIALS; ION IMPLANTATION; LASER RADIATION; MICROSTRUCTURE; PULSED IRRADIATION; SILICON; SOLUBILITY
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IRRADIATION; MATERIALS; RADIATIONS; SEMIMETALS