Structural control in porous/compact multilayer systems grown by magnetron sputtering
Creators
- 1. Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Americo Vespucio, 49. E-41092 Seville (Spain)
Description
In this work we analyze a phenomenon that takes place when growing magnetron sputtered porous/compact multilayer systems by alternating the oblique angle and the classical configuration geometries. We show that the compact layers develop numerous fissures rooted in the porous structures of the film below, in a phenomenon that amplifies when increasing the number of stacked layers. We demonstrate that these fissures emerge during growth due to the high roughness of the porous layers and the coarsening of a discontinuous interfacial region. To minimize this phenomenon, we have grown thin interlayers between porous and compact films under the impingement of energetic plasma ions, responsible for smoothing out the interfaces and inhibiting the formation of structural fissures. This method has been tested in practical situations for compact TiO2/porous SiO2 multilayer systems, although it can be extrapolated to other materials and conditions. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/aa8cf4Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 28
- Journal Issue
- 46
- Journal Page Range
- [9 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50042714
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- INTERFACES; LAYERS; MAGNETRONS; POROUS MATERIALS; SILICON OXIDES; SPUTTERING; THIN FILMS; TITANIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS