Radiation defects in 2-4-52 semiconductor compounds

Modern state of art of experimental RD investigations in semiconductors of 2-4-52 group is reviewed. Possibility for predicting properties of irradiated ternary compounds on the basis of corresponding investigations into their binary electron-nuclear analogs of 3-5 gropu is the most important conclusion in this work. Also possibility for controlling 2-4-52 compound properties such as electric conductivity, conductivity type, optical transparency, tensoelectrical characteristics with high-energy particle irradiation has been shown