Published December 15, 2008 | Version v1
Journal article

Cross-Polarized Single Photon Emission from Single Semiconductor Quantum Dots with V-Type Level Driven by Pulse Field

  • 1. School of Science, Hunan University of Technology, Zhuzhou 412008 (China)
  • 2. State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

Description

The statistic properties of photon emissions from single semiconductor quantum dots with V-type level driven by pulses are investigated theoretically Based on quantum regression theorem and master equations, the dynamic equations of the second-order correlation function of the photon emissions are deduced. The calculated results reveal that the efficiency of single photon emissions from two orthogonal polarization eigenstates (|x> and |y>) reaches the maximum when the input pulses area is about π, and the probability of the cross-polarized single photon emission from |x> and |y> decreases with increasing of pulse width

Availability note (English)

Available from http://dx.doi.org/10.1088/0253-6102/50/6/35

Additional details

Identifiers

Publishing Information

Journal Title
Communications in Theoretical Physics
Journal Volume
50
Journal Issue
6
Journal Page Range
p. 1417-1421
ISSN
0253-6102

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40081445
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CORRELATION FUNCTIONS; EIGENSTATES; EQUATIONS; PHOTON EMISSION; POLARIZATION; PROBABILITY; PULSES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS
Descriptors DEC
EMISSION; FUNCTIONS; MATERIALS; NANOSTRUCTURES