Published December 15, 2008
| Version v1
Journal article
Cross-Polarized Single Photon Emission from Single Semiconductor Quantum Dots with V-Type Level Driven by Pulse Field
Creators
- 1. School of Science, Hunan University of Technology, Zhuzhou 412008 (China)
- 2. State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
Description
The statistic properties of photon emissions from single semiconductor quantum dots with V-type level driven by pulses are investigated theoretically Based on quantum regression theorem and master equations, the dynamic equations of the second-order correlation function of the photon emissions are deduced. The calculated results reveal that the efficiency of single photon emissions from two orthogonal polarization eigenstates (|x> and |y>) reaches the maximum when the input pulses area is about π, and the probability of the cross-polarized single photon emission from |x> and |y> decreases with increasing of pulse width
Availability note (English)
Available from http://dx.doi.org/10.1088/0253-6102/50/6/35Additional details
Identifiers
Publishing Information
- Journal Title
- Communications in Theoretical Physics
- Journal Volume
- 50
- Journal Issue
- 6
- Journal Page Range
- p. 1417-1421
- ISSN
- 0253-6102
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40081445
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CORRELATION FUNCTIONS; EIGENSTATES; EQUATIONS; PHOTON EMISSION; POLARIZATION; PROBABILITY; PULSES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- EMISSION; FUNCTIONS; MATERIALS; NANOSTRUCTURES