Fabrication and characterization of C implantation standards for Si1-x-yGexCy alloys

Known amounts of carbon were implanted into a set of Si1-xGex alloy films (0<x<0.35) to provide quantification standards for C composition measurements of Si1-x-yGexCy alloys by secondary ion mass spectrometry. The implanted doses were fixed to within ±2%, the thicknesses of implanted films were measured to within ±1% using high-resolution electron microscopy, and the Ge concentrations were determined to within ±0.5% using Rutherford backscattering spectroscopy. For Si:Ge ratios in the range Si66Ge34 to Si91Ge9, the relative sensitivity factor for carbon with respect to silicon, and for carbon relative to germanium, both decreased substantially with increasing Ge content