Published 2005 | Version v1
Book Metadata-only

Ultra high temperature sintering by using 24 GHz gyrotron

Creators

  • 1. Research Center for Development of Far-Infrared Region, Fukui Univ., Fukui (Japan)

Description

Boron carbide (B4C) is one of advanced materials. Some of its prominent applications are control rods in nuclear reactors and radiation protection. 24 GHz microwave processing for B4C ceramics were performed under flowing argon gas using the sintering system. The sintered samples were characterized by the density, the shrinkage and SEM micrographs of fracture surface

Abstract (Russian)

Карбид бора B4C - один из наиболее прогрессивных материалов. Он применяется, в частности, в регулирующих стержнях в ядерных реакторах и в радиационной защите. Разработана обработка керамики из B4C микроволновым излучением 24 ГГц при обтекании аргоном в качестве среды спекания. Приводятся данные о плотности и усадке спеченных образцов, а также о микроструктуре поверхности их излома
Part of:
15th International conference on high-power particle beams. BEAMS'2004. Proceedings

Additional details

Publishing Information

Publisher
D.V. Efremov Scientific Research Inst. of Electrophysical Apparatus
Imprint Place
Saint-Petersburg (Russian Federation)
ISBN
5-87911-088-5
Imprint Title
15th International conference on high-power particle beams. BEAMS'2004. Proceedings
Imprint Pagination
922 p.
Journal Page Range
p. 528-531

Conference

Title
15. International conference on high-power particle beams. BEAMS'2004
Dates
18-23 Jul 2004
Place
Saint-Petersburg (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
37070129
Subject category
S36: MATERIALS SCIENCE; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ARGON; BORON CARBIDES; DENSITY; FRACTURES; GHZ RANGE 01-100; MICROSTRUCTURE; MICROWAVE AMPLIFIERS; MICROWAVE RADIATION; PHYSICAL RADIATION EFFECTS; SHRINKAGE; SINTERED MATERIALS; SINTERING; SURFACE PROPERTIES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K
Descriptors DEC
AMPLIFIERS; BORON COMPOUNDS; CARBIDES; CARBON COMPOUNDS; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FABRICATION; FAILURES; FLUIDS; FREQUENCY RANGE; GASES; GHZ RANGE; MATERIALS; MICROWAVE EQUIPMENT; NONMETALS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; RARE GASES; TEMPERATURE RANGE

Optional Information

Notes
5 refs., 5 figs.