Published 2006
| Version v1
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Preliminary thermal treatment effect on radiation defect-formation efficiency in silicon
Creators
- 1. Tashkentskij universitet informatsionnykh tekhnologij, Tashkent, (Uzbekistan)
- 2. Natsional'nyj Universitet Uzbekistana, Tashkent, (Uzbekistan)
Description
no abstract available
Files
38111407.pdf
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Additional details
Additional titles
- Original title (Russian)
- Влияние предварительной термообработки на эффективность радиационного дефектообразования в кремнии
Publishing Information
- Publisher
- Fiziko-tekhnicheskij institut 'Fizika-solntse'
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Proceedings of 3. international conference 'Fundamental and applied problems of physics'
- Imprint Pagination
- 410 p.
- Journal Page Range
- p. 158-159
- Report number
- INIS-UZ--124
Conference
- Title
- 3. International conference 'Fundamental and applied problems of physics' consecrated to 15th anniversary of Uzbekistan independence
- Original Conference Title
- Tret'ya mezhdunarodnaya konferentsiya 'Fundamental'nye i prikladnye voprosy fiziki' posvyashchennaya 15--letiyu nezavisimosti Uzbekistana
- Dates
- 26-27 Oct 2006
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 38111407
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- A CENTERS; ANNEALING; CRYSTAL DOPING; CRYSTAL GROWTH; DOPED MATERIALS; DYSPROSIUM; ERBIUM; GADOLINIUM; GAMMA RADIATION; MONOCRYSTALS; N-TYPE CONDUCTORS; SAMARIUM; SILICON; TERBIUM; TRACE AMOUNTS
- Descriptors DEC
- COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; MATERIALS; METALS; POINT DEFECTS; RADIATIONS; RARE EARTHS; SEMICONDUCTOR MATERIALS; SEMIMETALS; VACANCIES
Optional Information
- Notes
- 2 refs. Imprint:Materialy tret'ej mezhdunarodnoj konferentsii 'Fundamental'nye i priklagnye voprosy fiziki'