Published November 9, 2011 | Version v1
Journal article Metadata-only

Flexible resistive switching memory based on Mn0.20Zn0.80O/HfO2 bilayer structure

Creators

  • 1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

Description

We have investigated Mn0.20Zn0.80O/HfO2 bilayer structure resistance memory fabricated on flexible Kapton substrates. The Mn0.20Zn0.80O/HfO2 bilayer structure shows a steady and bipolar resistive switching characteristic with an on/off ratio of ∼70 at 0.5 V. Through the bending investigation, our flexible memory exhibits no degradation in switching property, even when the substrate is bent up to 11 mm radius. The resistive switching mechanism of the Mn0.20Zn0.80O/HfO2 bilayer structure can be attributed to the control of oxygen vacancies in HfO2 through the forward or reverse bias.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/44/44/445101

Additional details

Identifiers

DOI
10.1088/0022-3727/44/44/445101;
PII
S0022-3727(11)03421-8;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
44
Journal Issue
44
Journal Page Range
[5 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43112033
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRIC CONDUCTIVITY; HAFNIUM OXIDES; LAYERS; MANGANESE COMPOUNDS; OXYGEN; OXYGEN COMPOUNDS; SUBSTRATES; VACANCIES; ZINC COMPOUNDS
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; HAFNIUM COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS