Published 2000
| Version v1
Miscellaneous
Static and dynamic parameters trade-off of Si p-n-junctions irradiated by fast electrons under reverse bias at low temperature (77 K)
- 1. Institute of Solid State and Semiconductor Physics, Minsk (Belarus)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
- Imprint Pagination
- 120 p.
- Journal Page Range
- p. 54
Conference
- Title
- 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
- Dates
- 12-15 Jun 2000
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 32030016
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- CRYSTAL DEFECTS; CZOCHRALSKI METHOD; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRON BEAMS; IRRADIATION; P-N JUNCTIONS; PHOSPHORUS ADDITIONS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- ALLOYS; BEAMS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTS; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TEMPERATURE RANGE