Published February 15, 1976
| Version v1
Journal article
Oxygen distribution in sputtered Nb-Ge films
Creators
- 1. Westinghouse Research Laboratories, Pittsburgh, Pennsylvania 15235
Description
A quantiative determination of the distribution of oxygen in a high-T/subc/ (22 K) Nb-Ge film has been made using a nuclear backscattering method. The Nb/Ge ratios as a function of depth have also been determined. An apparent correlation between oxygen concentration and Nb/Ge ratio is observed
Additional details
Identifiers
- DOI
- 10.1063/1.88711;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 28
- Journal Issue
- 4
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 237-239
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 7251055
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- BACKSCATTERING; CHEMICAL COMPOSITION; CHEMICAL PREPARATION; FILMS; GERMANIUM ALLOYS; NIOBIUM BASE ALLOYS; OXYGEN; OXYGEN ADDITIONS; RADIATION SCATTERING ANALYSIS; SPUTTERING; SUPERCONDUCTIVITY; TRANSITION TEMPERATURE; TYPE-II SUPERCONDUCTORS
- Descriptors DEC
- ALLOYS; CHEMICAL ANALYSIS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; NIOBIUM ALLOYS; NONDESTRUCTIVE ANALYSIS; NONMETALS; PHYSICAL PROPERTIES; SCATTERING; SUPERCONDUCTORS; SYNTHESIS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT ALLOYS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent