Published March 12, 2007 | Version v1
Journal article

Wafer-level filling of microfabricated atomic vapor cells based on thin-film deposition and photolysis of cesium azide

  • 1. Time and Frequency Division, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)
  • 2. Electromagnetics Division, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

Description

The thin-film deposition and photodecomposition of cesium azide are demonstrated and used to fill arrays of miniaturized atomic resonance cells with cesium and nitrogen buffer gas for chip-scale atomic-based instruments. Arrays of silicon cells are batch fabricated on wafers into which cesium azide is deposited by vacuum thermal evaporation. After vacuum sealing, the cells are irradiated with ultraviolet radiation, causing the azide to photodissociate into pure cesium and nitrogen in situ. This technology integrates the vapor-cell fabrication and filling procedures into one continuous and wafer-level parallel process, and results in cells that are optically transparent and chemically pure

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
90
Journal Issue
11
Journal Page Range
p. 114106-114106.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2007 American Institute of Physics