Fabrication of metal matrix composite containing manganese nitride showing giant negative thermal expansion by compressive torsion processing
- 1. Nagoya University, Graduate School of Engineering, Department of Applied Physics, Nagoya, Aichi (Japan)
- 2. Yamagata University, Graduate School of Science and Engineering, Department of Mechanical Systems Engineering, Yonezawa, Yamagata (Japan)
- 3. Nagoya University, Graduate School of Engineering, Department of Materials Process Engineering, Nagoya, Aichi (Japan)
Description
Antiperovskite manganese nitride Mn3.1Zn0.5Sn0.4N was composited with Al by compressive torsion processing (CTP). This class of nitrides is anticipated for use as a thermal-expansion compensator because of giant negative thermal expansion (NTE). It is difficult to form a composite with molten metal that causes a chemical reaction. To date, only limited success has been achieved. Composites formed by CTP at 573 K exhibit lower thermal expansion and electrical resistivity than those produced by electric-current sintering. That achievement is attributable to suppressed chemical erosion of the filler by treatment at a lower temperature while the strong mechanical energy strengthens the interface between the filler and the matrix and reduces pores in the material. Compressive torsion processing is a promising method for forming metal matrix composites containing giant NTE fillers. (author)
Availability note (English)
Available from DOI: https://doi.org/10.2320/matertrans.MT-M2020363Additional details
Identifiers
Publishing Information
- Journal Title
- Materials Transactions (Online)
- Journal Volume
- 62
- Journal Issue
- 5
- Journal Page Range
- p. 590-595
- ISSN
- 1347-5320
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 53058951
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM OXIDES; CHEMICAL REACTIONS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; EROSION; FILLERS; MANGANESE NITRIDES; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; SINTERING; THERMAL EXPANSION; TORSION; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY; YOUNG MODULUS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CURRENTS; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; EXPANSION; FABRICATION; MANGANESE COMPOUNDS; MECHANICAL PROPERTIES; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SILICON COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 39 refs., 7 figs.