Flexible superconducting Nb transmission lines on thin film polyimide for quantum computing applications
Creators
- 1. Microsoft Research, Redmond, WA 98052 (United States)
- 2. Alabama Micro/Nano Science and Technology Center, Electrical and Computer Engineering Department, Auburn University, Auburn, AL 36849 (United States)
- 3. ARC Centre of Excellence for Engineered Quantum Systems and Station Q Sydney, School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia)
Description
We describe progress and initial results achieved towards the goal of developing integrated multi-conductor arrays of shielded controlled-impedance flexible superconducting transmission lines with ultra-miniature cross sections and wide bandwidths (dc to >10 GHz) over meter-scale lengths. Intended primarily for use in future scaled-up quantum computing systems, such flexible thin-film niobium/polyimide ribbon cables could provide a physically compact and ultra-low thermal conductance alternative to the rapidly increasing number of discrete coaxial cables that are currently used by quantum computing experimentalists to transmit signals between the several low-temperature stages (from ∼4 K down to ∼20 mK) of a dilution refrigerator. We have concluded that these structures are technically feasible to fabricate, and so far they have exhibited acceptable thermo-mechanical reliability. S -parameter results are presented for individual 2-metal layer Nb microstrip structures having 50 Ω characteristic impedance; lengths ranging from 50 to 550 mm were successfully fabricated. Solderable pads at the end terminations allowed testing using conventional rf connectors. Weakly coupled open-circuit microstrip resonators provided a sensitive measure of the overall transmission line loss as a function of frequency, temperature, and power. Two common microelectronic-grade polyimide dielectrics, one conventional and the other photo-definable (PI-2611 and HD-4100, respectively) were compared. Our most striking result, not previously reported to our knowledge, was that the dielectric loss tangents of both polyimides, over frequencies from 1 to 20 GHz, are remarkably low at deep cryogenic temperatures, typically 100× smaller than corresponding room temperature values. This enables fairly long-distance (meter-scale) transmission of microwave signals without excessive attenuation, and also permits usefully high rf power levels to be transmitted without creating excessive dielectric heating. We observed loss tangents as low as 2.2 × 10−5 at 20 mK, although losses increased somewhat at very low rf power levels, similar to the well-known behavior of amorphous inorganic dielectrics such as SiO2. Our fabrication techniques could be extended to more complex structures such as multiconductor cables, embedded microstrip, 3-metal layer stripline or rectangular coax, and integrated attenuators and thermalization structures. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-2048/29/8/084007Additional details
Identifiers
Publishing Information
- Journal Title
- Superconductor Science and Technology
- Journal Volume
- 29
- Journal Issue
- 8
- Journal Page Range
- [12 p.]
- ISSN
- 0953-2048
- CODEN
- SUSTEF
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50007586
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COAXIAL CABLES; CONNECTORS; CRYOGENICS; DIELECTRIC MATERIALS; ELECTRIC IMPEDANCE; GHZ RANGE 01-100; MICROWAVE RADIATION; NIOBIUM; QUANTUM COMPUTERS; RESONATORS; SILICON OXIDES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSMISSION
- Descriptors DEC
- CABLES; CHALCOGENIDES; COMPUTERS; CONDUCTOR DEVICES; ELECTRIC CABLES; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; FREQUENCY RANGE; GHZ RANGE; IMPEDANCE; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; REFRACTORY METALS; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS